Analog Circuits - Electronics & Communication Engineering Previous Year Questions
Practice Analog Circuits - Electronics & Communication Engineering previous year questions organised from real papers, with year-wise coverage and clear topic navigation.
29Papers
19Years
198Questions
1Topics
Analog Circuits question pattern
Every graph below is calculated only from this selection.
Questions by year
Compare question counts across years.
Difficulty distribution
How the classified questions are distributed by difficulty.
198questions
Medium164
82.8%
Easy22
11.1%
Hard12
6.1%
Question type distribution
MCQ, numerical, multiple-select and other formats found in these papers.
198questions
MCQ139
70.2%
Numerical Answer Type (NAT)45
22.7%
MSQ7
3.5%
Fill in the blanks7
3.5%
Subject weightage
Top subjects by unique question coverage.
Electronics & Communication Engineering
198 Qs
Most asked topics
Top topics across the included previous year papers.
Analog Circuits
198 Qs
Subtopic coverage
Top subtopics inside this exact selection.
Op-amp Circuits
77 Qs
BJT and MOSFET Amplifiers
75 Qs
Diode Circuits
46 Qs
Paper coverage
Question coverage for the most populated papers. Every active PYP paper remains listed below.
Electronics and Communication Engineering (EC) 2026
8 Qs
Electronics & Communication Engineering (EC) 2025
10 Qs
Electronics & Communication Engineering (EC) 2024
7 Qs
Electronics & Communication Engineering (EC) 2023
6 Qs
Electronics & Communication Engineering (EC) 2022
9 Qs
Electronics & Communication Engineering (EC) 2021
7 Qs
Electronics & Communication Engineering (EC) 2020
8 Qs
Electronics & Communication Engineering (EC) 2019
7 Qs
Electronics & Communication Engineering (EC) 2018
5 Qs
Electronics & Communication Engineering (EC) 2017
6 Qs
Electronics & Communication Engineering (EC) 2017 [Session 1]
6 Qs
Electronics & Communication Engineering (EC) 2017 [Session 2]
6 Qs
Electronics & Communication Engineering (EC) 2016 [Session 1]
7 Qs
Electronics & Communication Engineering (EC) 2016 [Session 2]
7 Qs
Electronics & Communication Engineering (EC) 2016 [Session 3]
7 Qs
Electronics & Communication Engineering (EC) 2014 [Session 4]
7 Qs
Electronics & Communication Engineering (EC) 2014 [Session 1]
4 Qs
Electronics & Communication Engineering (EC) 2014 [Session 3]
3 Qs
Electronics & Communication Engineering (EC) 2014 [Session 2]
2 Qs
Electronics & Communication Engineering (EC) 2013 [Session 2]
9 Qs
Electronics & Communication Engineering (EC) 2013 [Session 3]
9 Qs
Electronics & Communication Engineering (EC) 2013 [Session 4]
7 Qs
Electronics & Communication Engineering (EC) 2013 [Session 1]
6 Qs
Electronics & Communication Engineering (EC) 2012
6 Qs
Electronics & Communication Engineering (EC) 2011
8 Qs
Electronics & Communication Engineering (EC) 2010
6 Qs
Electronics & Communication Engineering (EC) 2009
6 Qs
Electronics & Communication Engineering (EC) 2008
10 Qs
Electronics & Communication Engineering (EC) 2007
9 Qs
Browse by subtopics
Open a focused page built from the same verified paper data.
2008 · Electronics & Communication Engineering · Analog Circuits · Diode Circuits
Electronics & Communication Engineering (EC) 2008
In the following limiter circuit, an input voltage \(V_i = 10\sin 100\pi t\) is applied. Assume that the diode drop is 0.7 V when it is forward biased. The Zener breakdown voltage is 6.8 V.
The maximum and minimum values of the output voltage respectively are
2010 · Electronics & Communication Engineering · Analog Circuits · BJT and MOSFET Amplifiers
Electronics & Communication Engineering (EC) 2010
In the silicon BJT circuit shown below, assume that the emitter area of transistor Q1 is half that of transistor Q2. The value of current I₀ is approximately
2011 · Electronics & Communication Engineering · Analog Circuits · Op-amp Circuits
Electronics & Communication Engineering (EC) 2011
The circuit below implements a filter between the input current \(i_i\) and the output voltage \(v_o\). Assume that the opamp is ideal. The filter implemented is a
2012 · Electronics & Communication Engineering · Analog Circuits · BJT and MOSFET Amplifiers
Electronics & Communication Engineering (EC) 2012
The current \(i_b\) through the base of a silicon \(npn\) transistor is \(1+0.1\cos(10000\pi t)\) mA. At 300 K, the \(r_\pi\) in the small signal model of the transistor is
