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Previous year question hub

Junctions, Transistors and Optoelectronic Devices - Electronic Devices - Electronics & Communication Engineering Previous Year Questions

Practice Junctions, Transistors and Optoelectronic Devices - Electronic Devices - Electronics & Communication Engineering previous year questions organised from real papers, with year-wise coverage and clear topic navigation.

21Papers
14Years
74Questions
1Topics

Junctions, Transistors and Optoelectronic Devices question pattern

Every graph below is calculated only from this selection.

Questions by year

Year-wise coverage for Junctions, Transistors and Optoelectronic Devices. Each bar uses a separate theme-derived color.

Difficulty distribution

How the classified questions are distributed by difficulty.

Medium 38 51.4%
Easy 33 44.6%
Hard 3 4.1%

Question type distribution

MCQ, numerical, multiple-select and other formats found in these papers.

MCQ 45 60.8%
Numerical Answer Type (NAT) 22 29.7%
MSQ 4 5.4%
Fill in the blanks 3 4.1%

Subject weightage

Top subjects by unique question coverage.

Electronics & Communication Engineering
74 Qs

Most asked topics

Top topics across the included previous year papers.

Electronic Devices
74 Qs

Subtopic coverage

Top subtopics inside this exact selection.

Junctions, Transistors and Optoelectronic Devices
74 Qs

Paper coverage

Question coverage for the most populated papers. Every active PYP paper remains listed below.

Electronics and Communication Engineering (EC) 2026
4 Qs
Electronics & Communication Engineering (EC) 2025
2 Qs
Electronics & Communication Engineering (EC) 2024
5 Qs
Electronics & Communication Engineering (EC) 2023
1 Qs
Electronics & Communication Engineering (EC) 2022
2 Qs
Electronics & Communication Engineering (EC) 2021
2 Qs
Electronics & Communication Engineering (EC) 2020
5 Qs
Electronics & Communication Engineering (EC) 2019
6 Qs
Electronics & Communication Engineering (EC) 2018
8 Qs
Electronics & Communication Engineering (EC) 2017
7 Qs
Electronics & Communication Engineering (EC) 2016 [Session 2]
5 Qs
Electronics & Communication Engineering (EC) 2016 [Session 3]
4 Qs
Electronics & Communication Engineering (EC) 2016 [Session 1]
3 Qs
Electronics & Communication Engineering (EC) 2014 [Session 1]
2 Qs
Electronics & Communication Engineering (EC) 2014 [Session 2]
1 Qs
Electronics & Communication Engineering (EC) 2014 [Session 4]
1 Qs
Electronics & Communication Engineering (EC) 2013 [Session 1]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 4]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 2]
3 Qs
Electronics & Communication Engineering (EC) 2013 [Session 3]
3 Qs
Electronics & Communication Engineering (EC) 2012
2 Qs

Included previous year papers

Newest papers appear first. Sort by year, question coverage or name.

PaperYear / sessionQuestions in this viewOpen
Electronics and Communication Engineering (EC) 202620264View paper
Electronics & Communication Engineering (EC) 202520252View paper
Electronics & Communication Engineering (EC) 202420245View paper
Electronics & Communication Engineering (EC) 202320231View paper
Electronics & Communication Engineering (EC) 202220222View paper
Electronics & Communication Engineering (EC) 202120212View paper
Electronics & Communication Engineering (EC) 202020205View paper
Electronics & Communication Engineering (EC) 201920196View paper
Electronics & Communication Engineering (EC) 201820188View paper
Electronics & Communication Engineering (EC) 201720177View paper
Electronics & Communication Engineering (EC) 2016 [Session 1]20163View paper
Electronics & Communication Engineering (EC) 2016 [Session 2]20165View paper
Electronics & Communication Engineering (EC) 2016 [Session 3]20164View paper
Electronics & Communication Engineering (EC) 2014 [Session 1]20142View paper
Electronics & Communication Engineering (EC) 2014 [Session 2]20141View paper
Electronics & Communication Engineering (EC) 2014 [Session 4]20141View paper
Electronics & Communication Engineering (EC) 2013 [Session 1]20134View paper
Electronics & Communication Engineering (EC) 2013 [Session 2]20133View paper
Electronics & Communication Engineering (EC) 2013 [Session 3]20133View paper
Electronics & Communication Engineering (EC) 2013 [Session 4]20134View paper
Electronics & Communication Engineering (EC) 201220122View paper

All Junctions, Transistors and Optoelectronic Devices previous year questions

Practice every matching question in batches of 20, with every available option.

1
2012 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2012
The gate-source overlap capacitance is approximately

Question diagram

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2
2012 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2012

The source-body junction capacitance is approximately

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3
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 1]

In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is

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4
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 1]

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

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5
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 1]

In a MOSFET operating in the saturation region, the channel length modulation effect causes

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6
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 1]
The small-signal resistance (i.e., dVB/dID) in kΩ offered by the n-channel MOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device transconductance parameter kN = μnCox(W/L) = 40 μA/V2, threshold voltage VTN = 1 V, and neglect body effect and channel length modulation effects)
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7
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 4]
The small-signal resistance (i.e., \(dV_B/dI_D\)) in kΩ offered by the n-channel MOSFET M shown in the figure below, at a bias point of \(V_B = 2\) V is (device data for M: device transconductance parameter \(k_n = \mu_n C_{ox} (W/L) = 40\) μA/V², threshold voltage \(V_{TN} = 1\) V, and neglect body effect and channel length modulation effects)
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8
2014 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2014 [Session 1]
The doping concentrations on the p-side and n-side of a silicon diode are 1 × 10^{16} cm^{-3} and 1 × 10^{17} cm^{-3}, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon n_i = 1.5 × 10^{10} cm^{-3} and kT/q = 26 mV. The electron concentration at the edge of the depletion region on the p-side is
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9
2014 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2014 [Session 1]
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
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10
2014 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2014 [Session 2]
When a silicon diode having a doping concentration of \( N_A = 9 \times 10^{16} \) cm\(^{-3}\) on p-side and \( N_D = 1 \times 10^{16} \) cm\(^{-3}\) on n-side is reverse biased, the total depletion width is found to be 3 \( \mu \)m. Given that the permittivity of silicon is \( 1.04 \times 10^{-12} \) F/cm, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are
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11
2014 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2014 [Session 4]
Consider two BJTs biased at the same collector current with area A₁ = 0.2 μm × 0.2 μm and A₂ = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10¹⁰ cm⁻³, and q = 1.6 × 10⁻¹⁹ C, the difference between the base-emitter voltages (in mV) of the two BJTs (i.e., V_BE1 - V_BE2) is _____.
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12
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 1]
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):
P: As channel length reduces, OFF-state current increases.
Q: As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.
Which of the above statements are INCORRECT?
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13
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 1]
Consider a silicon p-n junction with a uniform acceptor doping concentration of \(10^{17} \, cm^{-3}\) on the p-side and a uniform donor doping concentration of \(10^{16} \, cm^{-3}\) on the n-side. No external voltage is applied to the diode. Given: \(kT/q = 26 \, mV\), \(n_i = 1.5 \times 10^{10} \, cm^{-3}\), \(\epsilon_{Si} = 12 \epsilon_0\), \(\epsilon_0 = 8.85 \times 10^{-14} \, F/m\), and \(q = 1.6 \times 10^{-19} \, C\).
The charge per unit junction area (nC cm\(^{-2}\)) in the depletion region on the p-side is ______
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14
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 1]
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that \(\frac{W}{L} = 4\), \(\mu_n C_{ox} = 70 \times 10^{-6} AV^{-2}\), the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 \(V^{-1}\). In the saturation region, the drain conductance (in micro siemens) is ______
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15
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 2]
The Ebers-Moll model of a BJT is valid
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16
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 2]
A long-channel NMOS transistor is biased in the linear region with \(V_{DS}=50\) mV and is used as a resistance. Which one of the following statements is NOT correct?
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17
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 2]
A voltage $V_G$ is applied across a MOS capacitor with metal gate and p-type silicon substrate at T=300 K. The inversion carrier density (in number of carriers per unit area) for $V_G = 0.8$ V is $2 \times 10^{11} \text{ cm}^{-2}$. For $V_G = 1.3$ V, the inversion carrier density is $4 \times 10^{11} \text{ cm}^{-2}$. What is the value of the inversion carrier density for $V_G = 1.8$ V?
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18
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 2]
Consider avalanche breakdown in a silicon $p^+n$ junction. The n-region is uniformly doped with a donor density $N_D$. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field $E_{crit}$. Assume $E_{crit}$ to be independent of $N_D$. If the built-in voltage of the $p^+n$ junction is much smaller than the breakdown voltage, $V_{BR}$, the relationship between $V_{BR}$ and $N_D$ is given by
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19
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 2]
Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of \(V_{GS}\) and \(V_{DS}\). Given,
\(g_m = 0.5 \ \mu\text{A/V}\) for \(V_{DS} = 50 \text{ mV}\) and \(V_{GS} = 2 \text{ V}\),
\(g_d = 8 \ \mu\text{A/V}\) for \(V_{GS} = 2 \text{ V}\) and \(V_{DS} = 0 \text{ V}\),
where \(g_m = \frac{\partial I_D}{\partial V_{GS}}\) and \(g_d = \frac{\partial I_D}{\partial V_{DS}}\).
The threshold voltage (in volts) of the transistor is ______
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20
2016 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2016 [Session 3]
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in
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