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Previous year question hub

Electronic Devices - Electronics & Communication Engineering Previous Year Questions

Practice Electronic Devices - Electronics & Communication Engineering previous year questions organised from real papers, with year-wise coverage and clear topic navigation.

21Papers
14Years
100Questions
1Topics

Electronic Devices question pattern

Every graph below is calculated only from this selection.

Questions by year

Year-wise coverage for Electronic Devices. Each bar uses a separate theme-derived color.

Difficulty distribution

How the classified questions are distributed by difficulty.

Medium 54 54%
Easy 42 42%
Hard 4 4%

Question type distribution

MCQ, numerical, multiple-select and other formats found in these papers.

MCQ 60 60%
Numerical Answer Type (NAT) 30 30%
MSQ 6 6%
Fill in the blanks 4 4%

Subject weightage

Top subjects by unique question coverage.

Electronics & Communication Engineering
100 Qs

Most asked topics

Top topics across the included previous year papers.

Electronic Devices
100 Qs

Subtopic coverage

Top subtopics inside this exact selection.

Junctions, Transistors and Optoelectronic Devices
74 Qs
Carrier Transport
15 Qs
Semiconductor Energy Bands and Carrier Statistics
11 Qs

Paper coverage

Question coverage for the most populated papers. Every active PYP paper remains listed below.

Electronics and Communication Engineering (EC) 2026
5 Qs
Electronics & Communication Engineering (EC) 2025
4 Qs
Electronics & Communication Engineering (EC) 2024
7 Qs
Electronics & Communication Engineering (EC) 2023
5 Qs
Electronics & Communication Engineering (EC) 2022
6 Qs
Electronics & Communication Engineering (EC) 2021
4 Qs
Electronics & Communication Engineering (EC) 2020
6 Qs
Electronics & Communication Engineering (EC) 2019
6 Qs
Electronics & Communication Engineering (EC) 2018
8 Qs
Electronics & Communication Engineering (EC) 2017
8 Qs
Electronics & Communication Engineering (EC) 2016 [Session 1]
6 Qs
Electronics & Communication Engineering (EC) 2016 [Session 2]
6 Qs
Electronics & Communication Engineering (EC) 2016 [Session 3]
5 Qs
Electronics & Communication Engineering (EC) 2014 [Session 4]
4 Qs
Electronics & Communication Engineering (EC) 2014 [Session 1]
2 Qs
Electronics & Communication Engineering (EC) 2014 [Session 2]
1 Qs
Electronics & Communication Engineering (EC) 2013 [Session 1]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 4]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 2]
3 Qs
Electronics & Communication Engineering (EC) 2013 [Session 3]
3 Qs
Electronics & Communication Engineering (EC) 2012
3 Qs

Browse by subtopics

Open a focused page built from the same verified paper data.

Junctions, Transistors and Optoelectronic Devices

Explore previous-paper coverage, trends and focused practice for Junctions, Transistors and Optoelectronic Devices.

74 questions21 papers14 years

Carrier Transport

Explore previous-paper coverage, trends and focused practice for Carrier Transport.

15 questions11 papers9 years

Semiconductor Energy Bands and Carrier Statistics

Explore previous-paper coverage, trends and focused practice for Semiconductor Energy Bands and Carrier Statistics.

11 questions8 papers8 years

Included previous year papers

Newest papers appear first. Sort by year, question coverage or name.

PaperYear / sessionQuestions in this viewOpen
Electronics and Communication Engineering (EC) 202620265View paper
Electronics & Communication Engineering (EC) 202520254View paper
Electronics & Communication Engineering (EC) 202420247View paper
Electronics & Communication Engineering (EC) 202320235View paper
Electronics & Communication Engineering (EC) 202220226View paper
Electronics & Communication Engineering (EC) 202120214View paper
Electronics & Communication Engineering (EC) 202020206View paper
Electronics & Communication Engineering (EC) 201920196View paper
Electronics & Communication Engineering (EC) 201820188View paper
Electronics & Communication Engineering (EC) 201720178View paper
Electronics & Communication Engineering (EC) 2016 [Session 1]20166View paper
Electronics & Communication Engineering (EC) 2016 [Session 2]20166View paper
Electronics & Communication Engineering (EC) 2016 [Session 3]20165View paper
Electronics & Communication Engineering (EC) 2014 [Session 1]20142View paper
Electronics & Communication Engineering (EC) 2014 [Session 2]20141View paper
Electronics & Communication Engineering (EC) 2014 [Session 4]20144View paper
Electronics & Communication Engineering (EC) 2013 [Session 1]20134View paper
Electronics & Communication Engineering (EC) 2013 [Session 2]20133View paper
Electronics & Communication Engineering (EC) 2013 [Session 3]20133View paper
Electronics & Communication Engineering (EC) 2013 [Session 4]20134View paper
Electronics & Communication Engineering (EC) 201220123View paper

Sample previous year questions

A varied preview from the papers represented in this selection, with every available option.

1
2012 · Electronics & Communication Engineering · Electronic Devices · Semiconductor Energy Bands and Carrier Statistics
Electronics & Communication Engineering (EC) 2012
The source of a silicon (\( n_i = 10^{10} \) per \( cm^3 \)) n-channel MOS transistor has an area of 1 sq \( \mu m \) and a depth of 1 \( \mu m \). If the dopant density in the source is \( 10^{19}/cm^3 \), the number of holes in the source region with the above volume is approximately
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2
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 1]

In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is

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3
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 2]
In a MOSFET operating in the saturation region, the channel length modulation effect causes
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4
2013 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2013 [Session 3]

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

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5
2014 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2014 [Session 1]
The doping concentrations on the p-side and n-side of a silicon diode are 1 × 10^{16} cm^{-3} and 1 × 10^{17} cm^{-3}, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon n_i = 1.5 × 10^{10} cm^{-3} and kT/q = 26 mV. The electron concentration at the edge of the depletion region on the p-side is
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