Electronic Devices - Electronics & Communication Engineering Previous Year Questions
Practice Electronic Devices - Electronics & Communication Engineering previous year questions organised from real papers, with year-wise coverage and clear topic navigation.
28Papers
19Years
148Questions
1Topics
Electronic Devices question pattern
Every graph below is calculated only from this selection.
Questions by year
Compare question counts across years.
Difficulty distribution
How the classified questions are distributed by difficulty.
148questions
Medium77
52%
Easy66
44.6%
Hard5
3.4%
Question type distribution
MCQ, numerical, multiple-select and other formats found in these papers.
148questions
MCQ100
67.6%
Numerical Answer Type (NAT)34
23%
Fill in the blanks8
5.4%
MSQ6
4.1%
Subject weightage
Top subjects by unique question coverage.
Electronics & Communication Engineering
148 Qs
Most asked topics
Top topics across the included previous year papers.
Electronic Devices
148 Qs
Subtopic coverage
Top subtopics inside this exact selection.
Junctions, Transistors and Optoelectronic Devices
111 Qs
Carrier Transport
23 Qs
Semiconductor Energy Bands and Carrier Statistics
14 Qs
Paper coverage
Question coverage for the most populated papers. Every active PYP paper remains listed below.
Electronics and Communication Engineering (EC) 2026
5 Qs
Electronics & Communication Engineering (EC) 2025
4 Qs
Electronics & Communication Engineering (EC) 2024
7 Qs
Electronics & Communication Engineering (EC) 2023
5 Qs
Electronics & Communication Engineering (EC) 2022
6 Qs
Electronics & Communication Engineering (EC) 2021
4 Qs
Electronics & Communication Engineering (EC) 2020
6 Qs
Electronics & Communication Engineering (EC) 2019
6 Qs
Electronics & Communication Engineering (EC) 2018
8 Qs
Electronics & Communication Engineering (EC) 2017
8 Qs
Electronics & Communication Engineering (EC) 2017 [Session 1]
7 Qs
Electronics & Communication Engineering (EC) 2017 [Session 2]
7 Qs
Electronics & Communication Engineering (EC) 2016 [Session 1]
6 Qs
Electronics & Communication Engineering (EC) 2016 [Session 2]
6 Qs
Electronics & Communication Engineering (EC) 2016 [Session 3]
5 Qs
Electronics & Communication Engineering (EC) 2014 [Session 4]
4 Qs
Electronics & Communication Engineering (EC) 2014 [Session 1]
2 Qs
Electronics & Communication Engineering (EC) 2014 [Session 2]
1 Qs
Electronics & Communication Engineering (EC) 2013 [Session 1]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 4]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 2]
3 Qs
Electronics & Communication Engineering (EC) 2013 [Session 3]
3 Qs
Electronics & Communication Engineering (EC) 2012
3 Qs
Electronics & Communication Engineering (EC) 2011
5 Qs
Electronics & Communication Engineering (EC) 2010
7 Qs
Electronics & Communication Engineering (EC) 2009
5 Qs
Electronics & Communication Engineering (EC) 2008
8 Qs
Electronics & Communication Engineering (EC) 2007
9 Qs
Browse by subtopics
Open a focused page built from the same verified paper data.
A varied preview from the papers represented in this selection, with every available option.
1
2007 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2007
The electron and hole concentrations in an intrinsic semiconductor are \(n_i\) per \(cm^3\) at 300 K. Now, if acceptor impurities are introduced with a concentration of \(N_A\) per \(cm^3\) (where \(N_A \gg n_i\)), the electron concentration per \(cm^3\) at 300 K will be
2011 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2011
A silicon PN junction is forward biased with a constant current at room temperature. When the temperature is increased by \(10^{\circ}C\), the forward bias voltage across the PN junction
2012 · Electronics & Communication Engineering · Electronic Devices · Semiconductor Energy Bands and Carrier Statistics
Electronics & Communication Engineering (EC) 2012
The source of a silicon (\( n_i = 10^{10} \) per \( cm^3 \)) n-channel MOS transistor has an area of 1 sq \( \mu m \) and a depth of 1 \( \mu m \). If the dopant density in the source is \( 10^{19}/cm^3 \), the number of holes in the source region with the above volume is approximately