Junctions, Transistors and Optoelectronic Devices - Electronic Devices - Electronics & Communication Engineering Previous Year Questions
Practice Junctions, Transistors and Optoelectronic Devices - Electronic Devices - Electronics & Communication Engineering previous year questions organised from real papers, with year-wise coverage and clear topic navigation.
28Papers
19Years
111Questions
1Topics
Junctions, Transistors and Optoelectronic Devices question pattern
Every graph below is calculated only from this selection.
Questions by year
Compare question counts across years.
Difficulty distribution
How the classified questions are distributed by difficulty.
111questions
Medium56
50.5%
Easy51
45.9%
Hard4
3.6%
Question type distribution
MCQ, numerical, multiple-select and other formats found in these papers.
111questions
MCQ77
69.4%
Numerical Answer Type (NAT)25
22.5%
Fill in the blanks5
4.5%
MSQ4
3.6%
Subject weightage
Top subjects by unique question coverage.
Electronics & Communication Engineering
111 Qs
Most asked topics
Top topics across the included previous year papers.
Electronic Devices
111 Qs
Subtopic coverage
Top subtopics inside this exact selection.
Junctions, Transistors and Optoelectronic Devices
111 Qs
Paper coverage
Question coverage for the most populated papers. Every active PYP paper remains listed below.
Electronics and Communication Engineering (EC) 2026
4 Qs
Electronics & Communication Engineering (EC) 2025
2 Qs
Electronics & Communication Engineering (EC) 2024
5 Qs
Electronics & Communication Engineering (EC) 2023
1 Qs
Electronics & Communication Engineering (EC) 2022
2 Qs
Electronics & Communication Engineering (EC) 2021
2 Qs
Electronics & Communication Engineering (EC) 2020
5 Qs
Electronics & Communication Engineering (EC) 2019
6 Qs
Electronics & Communication Engineering (EC) 2018
8 Qs
Electronics & Communication Engineering (EC) 2017
7 Qs
Electronics & Communication Engineering (EC) 2017 [Session 2]
6 Qs
Electronics & Communication Engineering (EC) 2017 [Session 1]
5 Qs
Electronics & Communication Engineering (EC) 2016 [Session 2]
5 Qs
Electronics & Communication Engineering (EC) 2016 [Session 3]
4 Qs
Electronics & Communication Engineering (EC) 2016 [Session 1]
3 Qs
Electronics & Communication Engineering (EC) 2014 [Session 1]
2 Qs
Electronics & Communication Engineering (EC) 2014 [Session 2]
1 Qs
Electronics & Communication Engineering (EC) 2014 [Session 4]
1 Qs
Electronics & Communication Engineering (EC) 2013 [Session 1]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 4]
4 Qs
Electronics & Communication Engineering (EC) 2013 [Session 2]
3 Qs
Electronics & Communication Engineering (EC) 2013 [Session 3]
3 Qs
Electronics & Communication Engineering (EC) 2012
2 Qs
Electronics & Communication Engineering (EC) 2011
4 Qs
Electronics & Communication Engineering (EC) 2010
4 Qs
Electronics & Communication Engineering (EC) 2009
3 Qs
Electronics & Communication Engineering (EC) 2008
6 Qs
Electronics & Communication Engineering (EC) 2007
9 Qs
Included previous year papers
Newest papers appear first. Search these papers or sort by year and name.
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Year
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Electronics and Communication Engineering (EC) 20262026
All Junctions, Transistors and Optoelectronic Devices previous year questions
Practice every matching question in batches of 20, with every available option.
1
2007 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2007
The electron and hole concentrations in an intrinsic semiconductor are \(n_i\) per \(cm^3\) at 300 K. Now, if acceptor impurities are introduced with a concentration of \(N_A\) per \(cm^3\) (where \(N_A \gg n_i\)), the electron concentration per \(cm^3\) at 300 K will be
2007 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2007
A p⁺-n junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2 V is 2 μm. For a reverse bias of 7.2 V, the depletion layer width will be
2007 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2007
Group I lists four types of p-n junction diodes. Match each device in Group I with one of the options in Group II to indicate the bias condition of that device in its normal mode of operation.
Group I
P. Zener Diode
Q. Solar cell
R. LASER diode
S. Avalanche Photodiode
Group II
1. Forward bias
2. Reverse bias
2007 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2007
Group I lists four different semiconductor devices. Match each device in Group I with its characteristic property in Group II.
Group I
P. BJT
Q. MOS capacitor
R. LASER diode
S. JFET
Group II
1. Population inversion
2. Pinch-off voltage
3. Early effect
4. Flat-band voltage
2007 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2007
Consider the following statements about the C-V characteristics plot: S1: The MOS capacitor has an n-type substrate. S2: If positive charges are introduced in the oxide, the C-V plot will shift to the left. Then which of the following is true?
2008 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2008
A silicon wafer has 100 nm of oxide on it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate
2008 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2008
The drain current of a MOSFET in saturation is given by \(I_D = K(V_{GS} - V_T)^2\) where \(K\) is a constant. The magnitude of the transconductance \(g_m\) is
2008 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2008
The measured transconductance $g_m$ of an NMOS transistor operating in the linear region is plotted against the gate voltage $V_G$ at a constant drain voltage $V_D$. Which of the following figures represents the expected dependence of $g_m$ on $V_G$?
2008 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2008
The cross section of a JFET is shown in the following figure. Let $V_G$ be -2V and let $V_P$ be the initial pinch-off voltage. If the width W is doubled (with other geometrical parameters and doping levels remaining the same), then the ratio between the mutual transconductances of the initial and the modified JFET is
2008 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2008
Consider the following assertions. S1: For Zener effect to occur, a very abrupt junction is required. S2: For quantum tunneling to occur, a very narrow energy barrier is required. Which of the following is correct?
2009 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2009
Consider the following two statements about the internal conditions in an n-channel MOSFET operating in the active region.\nS1: The inversion charge decreases from source to drain\nS2: The channel potential increases from source to drain\nWhich of the following is correct?
2010 · Electronics & Communication Engineering · Electronic Devices · Junctions, Transistors and Optoelectronic Devices
Electronics & Communication Engineering (EC) 2010
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close to unity, which one of the following conditions is TRUE?
