Semiconductor Devices And Logic Gates - Modern Physics - Physics Previous Year Questions

OR

NOR

NAND

AND

$A=0, B=0, Y=0$

$A=0, B=1 ; Y=0$

$A=1, B=0, Y=0$

$A=1, B=1 ; Y=0$

Holes are majority carriers and trivalent atoms are the dopants.

Electrons are minority carriers and pentavalent atoms are the dopants.

Electrons are majority carriers and trivalent atoms are the dopants.

Holes are minority carriers and pentavalent atoms are the dopants.

a $p-n-p$ transistor

an n-p-n transistor

a p-n junction diode

an inductor

$P=1, Q=1, R=0$

$P=0, Q=1, R=0$

$P=1, Q=0, R=1$

$P=1, Q=1, R=1$

$0^{\circ}$

$90^{\circ}$

$120^{\circ}$

$180^{\circ}$

0.7 V

0.3 V

0.4 V

1 V

\(\begin{array}{|l|l|l|} \hline \text { A } & \text { B } & \text { Y } \\ \hline 0 & 0 & 0 \\ \hline 1 & 0 & 0 \\ \hline 0 & 1 & 0 \\ \hline 1 & 1 & 0 \\ \hline \end{array}\)

\(\begin{array}{|l|l|l|} \hline \text { A } & \text { B } & \text { Y } \\ \hline 0 & 0 & 1 \\ \hline 1 & 0 & 0 \\ \hline 0 & 1 & 0 \\ \hline 1 & 1 & 1 \\ \hline \end{array}\)

\(\begin{array}{|c|c|c|} \hline A & B & Y \\ \hline 0 & 0 & 0 \\ \hline 1 & 0 & 1 \\ \hline 0 & 1 & 1 \\ \hline 1 & 1 & 1 \\ \hline \end{array}\)

\(\begin{array}{|l|l|l|} \hline \mathbf{A} & \mathbf{B} & \mathbf{Y} \\ \hline 0 & 0 & 1 \\ \hline 1 & 0 & 1 \\ \hline 0 & 1 & 1 \\ \hline 1 & 1 & 1 \\ \hline \end{array}\)

number of electrons increases while that of electrons decreases

number of holes increases while that of electrons decreases

number of holes and electrons do not change

number of holes and electrons increases equally

fractional change in minority carriers produce higher forward current

fractional change in majority carriers produce high reverse current

fractional change in minority carriers produce higher reverse current

fractional change in majority carriers produce higher forward current

High operational voltage

Warm-up time is required

Bandwidth of light is $4000\mathop {\rm{A}}\limits^{\rm{o}}-7000 \mathop {\rm{A}}\limits^{\rm{o}}$

Fast on-off switching

top of the valence band

bottom of the conduction band

bottom of the valence band

top of the conduction band

$10 \mathrm{~mA}, 5 \mathrm{~mA}, 5 \mathrm{~mA}$

$15 \mathrm{~mA}, 7.5 \mathrm{~mA}, 7.5 \mathrm{~mA}$

$12.5 \mathrm{~mA}, 5 \mathrm{~mA}, 7.5 \mathrm{~mA}$

$12.5 \mathrm{~mA}, 7.5 \mathrm{~mA}, 5 \mathrm{~mA}$

$Y=A+\bar{B}$

$Y=\overline{A+B}$

$Y=\bar{A}+B$

$Y=A+B$

$O R$

AND

NOT

NAND

$4.5 \times 10^{12}$

$8 \times 10^{14}$

$9 \times 10^{12}$

$9 \times 10^{11}$

Emitter is heavily doped and moderate in size.

Base is lightly doped and thin in size.

Collector is lightly doped and large in size.

Collector is moderately doped and large in size.