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Previous year question hub

Semiconductor Devices And Logic Gates - Modern Physics - Physics Previous Year Questions

Practice Semiconductor Devices And Logic Gates - Modern Physics - Physics previous year questions organised from real papers, with year-wise coverage and clear topic navigation.

2Papers
2Years
2Questions
1Topics

Semiconductor Devices And Logic Gates question pattern

Every graph below is calculated only from this selection.

Questions by year

Year-wise coverage for Semiconductor Devices And Logic Gates. Each bar uses a separate theme-derived color.

Difficulty distribution

How the classified questions are distributed by difficulty.

Not classified 2 100%

Question type distribution

MCQ, numerical, multiple-select and other formats found in these papers.

Multiple Choices 2 100%

Subject weightage

Top subjects by unique question coverage.

Physics
2 Qs

Most asked topics

Top topics across the included previous year papers.

Modern Physics
2 Qs

Subtopic coverage

Top subtopics inside this exact selection.

Semiconductor Devices And Logic Gates
2 Qs

Paper coverage

Question coverage for the most populated papers. Every active PYP paper remains listed below.

IAT IISER 2023
1 Qs
IAT IISER 2020
1 Qs

Included previous year papers

Newest papers appear first. Sort by year, question coverage or name.

PaperYear / sessionQuestions in this viewOpen
IAT IISER 202320231View paper
IAT IISER 202020201View paper

All Semiconductor Devices And Logic Gates previous year questions

Practice every matching question in batches of 20, with every available option.

1
2020 · Physics · Modern Physics · Semiconductor Devices And Logic Gates
IAT IISER 2020

Consider the circuit with a Zener diode whose breakdown voltage $V_z=4 \mathrm{~V}$. What is the voltage $V_0$ if $V_i=20 \mathrm{~V}$ ?

IAT (IISER) 2020 Physics - Semiconductor Devices and Logic Gates Question 2 English
A
8V
B
12V
C
10V
D
16V
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2
2023 · Physics · Modern Physics · Semiconductor Devices And Logic Gates
IAT IISER 2023
The intrinsic electron and hole concentrations of a Si-based intrinsic semiconductor are $n_e^{(0)}$ and $n_h^{(0)}$, respectively. Upon doping with trivalent impurities the respective carrier concentrations become $n_e$ and $n_h$. Which of the following options is true?
A
$n_e=n_h$
B
$n_e>n_e^{(0)}$
C
$n_h>n_h^{(0)}$
D
$n_e^{(0)}$ and $n_h^{(0)}$ are independent of temperature
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