Exam Details
ISROElectronics & Communication Engineering 2018
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80
Duration
180 mins
Package
ESE & GATE EC - Previous Year Papers
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80questions
Medium
58
72.5%
Hard
22
27.5%
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80questions
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100%
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2018 · Unclassified
ISROElectronics & Communication Engineering 2018
The circuit shown in the figure below is a: (where A1 & A2 are ideal op-amps)
2018 · Unclassified
ISROElectronics & Communication Engineering 2018
Determine the change in collector. due to change in base emitter voltage VBE from 250 C to 1000 C for a Silicon Transistor in Fixed Bias Configuration having =100. (Consider follwing variatio in Silicon transistor parameters with temperature- At T=250C, VBE = 0.65 V and At T = 1000C. VBE = 0.5 V)
2018 · Unclassified
ISROElectronics & Communication Engineering 2018
An antenna is fed with 200 W power. The efficiency of the antenna is 75%. If the radiation pattern of the antenna is pattern of the antenna is for (azimuth angle) and (elevation angle). =0 elsewhere Find the radiation intensity in the direction of maximum radiation
2018 · Unclassified
ISROElectronics & Communication Engineering 2018
A reflex klystron is oscillating at 10GHZ when operated in mode, find the transit time of the electron in repeller space in nano seconds (ns).
2018 · Unclassified
ISROElectronics & Communication Engineering 2018
Identify A and B current limiting techniques in a.c to d.c power supplies respectively, in the grapgh below.
2018 · Unclassified
ISROElectronics & Communication Engineering 2018
A Gold cavity resonator at 10 GHz is fully coated using m YBCO (Yttrium Barium Copper Oxide) material and operating at boiling temperature of liquid nitrogen. What is the Skin Depth of RF at this frequency? Assume = 4X107 Siemens/meter at cavity operating temperature.








