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Exam Details

ESE (IES) Electrical Engineering PAPER 2 (TECHNICAL) 2020

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Questions 150
Duration 180 mins
Package ESE & GATE EE - Previous Year Papers

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Difficulty distribution

Medium 125 83.3%
Hard 14 9.3%
Easy 11 7.3%

Question type distribution

Multiple Choices 150 100%

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Syllabus

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Sample questions from this paper

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1
2020 · Unclassified
ESE (IES) Electrical Engineering PAPER 2 (TECHNICAL) 2020
In a tunnel diode, the width of the junction barrier is
A
Directly proportional as the square root of impurity concentration
B
Inversely proportional as the square root of impurity concentration
C
Inversely proportional as square of impurity concentration
D
Directly proportional as square of impurity concentration
2
2020 · Unclassified
ESE (IES) Electrical Engineering PAPER 2 (TECHNICAL) 2020
In a grounded-emitter transistor, when emitter current becomes zero in cut-off region the emitter potential is called
A
Floating Emitter Potential
B
Cascading Emitter Potential
C
Cut-off Emitter Potential
D
Breaking Emitter Potential
3
2020 · Unclassified
ESE (IES) Electrical Engineering PAPER 2 (TECHNICAL) 2020
When maximum reverse-biasing voltage is applied between the collector and base terminals of the transistor and emitter is open circuited, breakdown occurs due to
A
Avalanche breakdown
B
Avalanche multiplication
C
Reach-through
D
Punch-through
4
2020 · Unclassified
ESE (IES) Electrical Engineering PAPER 2 (TECHNICAL) 2020
In a Field Effect Transistor (FET), the maximum voltage that can be applied between any two terminals is given by
A
Low |VDS| causing avalanche breakdown
B
|VDS| 0 when gate is reverse-biased
C
|VGS| = 0 when gate is reverse-biased
D
Low |VGS| causing avalanche breakdown
5
2020 · Unclassified
ESE (IES) Electrical Engineering PAPER 2 (TECHNICAL) 2020
A depletion-type MOSFET can be operated in as enhancement mode where negative charges are induced into n-type channel by applying
A
Positive Gate Voltage
B
Positive Drain Voltage
C
Negative Drain Voltage
D
Negative Gate Voltage
6
2020 · Unclassified
ESE (IES) Electrical Engineering PAPER 2 (TECHNICAL) 2020
The double base diode which is operated with the emitter forward biased and a smaller emitter junction is called
A
Field Effect Transistor (FET)
B
Uni-Junction Transistor (UJT)
C
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
D
Bipolar Junction Transistor (BJT)