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Exam Details

2025 Paper - II Electronics and Telecommunication Engineering

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Questions 150
Duration 180 mins
Package Indian Economic Service and Indian Statistical Service Examination - Previous Year Papers

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Showing all 150 questions in this paper.

Subject distribution

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Topic distribution

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Subtopic distribution

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Difficulty distribution

Easy 50 33.3%
Medium 50 33.3%
Hard 50 33.3%

Question type distribution

Multiple Choices 150 100%

Syllabus

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Sample questions from this paper

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1
2025 · Unclassified
2025 Paper - II Electronics and Telecommunication Engineering
Which one of the following is the maximum reverse voltage that can be applied to the P-N junction?
A
Maximum forward voltage
B
Peak inverse voltage
C
Maximum average voltage
D
Respective peak forward voltage
2
2025 · Unclassified
2025 Paper - II Electronics and Telecommunication Engineering
The common-base DC current gain of a transistor is 0·967. If the emitter current is 10 mA, the base current will be
A
0·53 mA
B
0·44 mA
C
0·33 mA
D
0·24 mA
3
2025 · Unclassified
2025 Paper - II Electronics and Telecommunication Engineering
In actual MOSFET characteristic, a non-zero slope exists beyond the saturation point. For the saturation region, i.e., (V_DS > V_DS (sat)), the effective channel length decreases and this phenomenon is called
A
base width modulation
B
channel width modulation
C
channel length modulation
D
base length modulation
4
2025 · Unclassified
2025 Paper - II Electronics and Telecommunication Engineering
MOSFETs have characteristics similar in form to those of JFETs. Hence MOSFETs are also known as
A
Depletion MOSFETs (D-MOSFETs)
B
Enhancement MOSFETs (E-MOSFETs)
C
Insulated Gate Field Effect Transistors (IGFETs)
D
p-channel MOSFETs
5
2025 · Unclassified
2025 Paper - II Electronics and Telecommunication Engineering
A transistor has α = 0·995 and if the base current is 200 μA, the value of the emitter current will be
A
30 mA
B
35 mA
C
40 mA
D
45 mA
6
2025 · Unclassified
2025 Paper - II Electronics and Telecommunication Engineering
A common-emitter transistor amplifier has an input impedance of 2 kΩ and a load resistance of 25 kΩ. If the β of the transistor is 100, the power gain will be
A
112500
B
125000
C
150000
D
175000