2020 Electronics and Telecommunication Engineering

Consider the following statements regarding the formation of P-N junctions : 1. Holes diffuse across the junction from P-side to N-side. 2. The depletion layer is wiped out. 3. There is continuous flow of current across the junction. 4. A barrier potential is set up across the junction. Which of the above statements are correct?

Silicon devices can be employed for a higher temperature limit (190 °C to 200 °C) as compared to germanium devices (85 °C to 100 °C). With respect to this, which of the following are incorrect? 1. Higher resistivity of silicon 2. Higher gap energy of silicon 3. Lower intrinsic concentration of silicon 4. Use of silicon devices in high-power applications Select the correct answer using the code given below.

For an n-channel silicon JFET with a = 2 × 10−4 cm and channel resistivity ρ = 5 Ω-cm, μn = 1300 cm2/V-s and ε0 = 9 × 10−12 F/m, the pinch-off voltage, Vp, is nearly

In tunnel diode, the Fermi level lies

The h_FE values in the specification sheet of a transistor are h_FE(max) = 225 and h_FE(min) = 64. What value of h_FE is to be adopted in practice?

A transistor is connected in CE configuration with V_CC = 10 V. The voltage drop across the 600 Ω resistor in the collector circuit is 0·6 V. If α = 0·98, the base current is nearly