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Exam Details

2018 Electronics and Telecommunication Engineering Paper

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Questions 120
Duration 180 mins
Package Indian Economic Service and Indian Statistical Service Examination - Previous Year Papers

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Showing all 120 questions in this paper.

Subject distribution

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Topic distribution

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Subtopic distribution

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Difficulty distribution

Hard 40 33.3%
Easy 40 33.3%
Medium 40 33.3%

Question type distribution

Multiple Choices 120 100%

Syllabus

Full Syllabus

Sample questions from this paper

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1
2018 · Unclassified
2018 Electronics and Telecommunication Engineering Paper
Consider the following statements : The output of a linear circuit, driven with a sine wave at a frequency f, is itself a sine wave 1. at the same frequency 2. with chance of changed amplitude 3. with chances of changed amplitude and phase Which of the above statements is/are correct?
A
1 and 2
B
1 only
C
1 and 3
D
2 only
2
2018 · Unclassified
2018 Electronics and Telecommunication Engineering Paper
Consider the following statements : The main contribution to photo-conduction is by 1. the generation of electron and hole pair by a photon 2. a donor electron jumping into the conduction band because of a photon's energy 3. a valence electron jumping into an acceptor state because of a photon's energy Which of the above statements is/are correct?
A
1 only
B
2 only
C
3 only
D
1, 2 and 3
3
2018 · Unclassified
2018 Electronics and Telecommunication Engineering Paper
Thermal runaway is not possible in FET because as the temperature of the FET increases
A
mobility decreases
B
trans-conductance increases
C
drain current increases
D
trans-conductance decreases
4
2018 · Unclassified
2018 Electronics and Telecommunication Engineering Paper
For JFET, the drain current I_D is
A
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)^{1/2}
B
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)
C
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)^{3/2}
D
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)²
5
2018 · Unclassified
2018 Electronics and Telecommunication Engineering Paper
For n-channel depletion MOSFET, the highest trans-conductance gain for small signal is at
A
V_{GS} = 0 V
B
V_{GS} = Vₚ
C
V_{GS} = |Vₚ|
D
V_{GS} = -Vₚ
6
2018 · Unclassified
2018 Electronics and Telecommunication Engineering Paper
The n-p-n transistor made of silicon has a DC base bias voltage 15 V and an input base resistor 150 kA. Then the value of the base current into the transistor is
A
03 A
B
93 A
C
953 A
D
953 A