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Previous year question hub

Semiconductor Electronics - Modern Physics - Physics Previous Year Questions

Practice Semiconductor Electronics - Modern Physics - Physics previous year questions organised from real papers, with year-wise coverage and clear topic navigation.

39Papers
27Years
125Questions
1Topics

Semiconductor Electronics question pattern

Every graph below is calculated only from this selection.

Questions by year

Year-wise coverage for Semiconductor Electronics. Each bar uses a separate theme-derived color.

Difficulty distribution

How the classified questions are distributed by difficulty.

Not classified 120 96%
Easy 3 2.4%
Medium 2 1.6%

Question type distribution

MCQ, numerical, multiple-select and other formats found in these papers.

Multiple Choices 125 100%

Subject weightage

Top subjects by unique question coverage.

Physics
125 Qs

Most asked topics

Top topics across the included previous year papers.

Modern Physics
125 Qs

Subtopic coverage

Top subtopics inside this exact selection.

Semiconductor Electronics
125 Qs

Paper coverage

Question coverage for the most populated papers. Every active PYP paper remains listed below.

NEET 2026
3 Qs
NEET 2025
2 Qs
NEET 2024
3 Qs
NEET 2024 RE EXAMINATION
3 Qs
NEET 2023 MANIPUR
4 Qs
NEET 2023
3 Qs
NEET 2022 Phase 1
4 Qs
NEET 2022 PHASE 2
3 Qs
NEET 2021
3 Qs
NEET 2020 PHASE 1
3 Qs
AIIMS 2019
3 Qs
NEET 2019
2 Qs
NEET 2018
3 Qs
AIIMS 2018
2 Qs
AIIMS 2017
3 Qs
NEET 2017
3 Qs
NEET 2016 PHASE 1
3 Qs
NEET 2016 PHASE 2
3 Qs
AIPMT 2015
2 Qs
AIPMT 2015 Cancelled Paper
2 Qs
AIPMT 2014
2 Qs
NEET 2013
3 Qs
NEET 2013 KARNATAKA
3 Qs
AIPMT 2012 PRELIMS
5 Qs
AIPMT 2012 MAINS
2 Qs
AIPMT 2011 PRELIMS
4 Qs
AIPMT 2011 MAINS
3 Qs
AIPMT 2010 PRELIMS
5 Qs
AIPMT 2010 MAINS
2 Qs
AIPMT 2009
4 Qs
AIPMT 2008
3 Qs
AIPMT 2007
4 Qs
AIPMT 2006
3 Qs
AIPMT 2005
6 Qs
AIPMT 2004
4 Qs
AIPMT 2003
4 Qs
AIPMT 2002
5 Qs
AIPMT 2001
3 Qs
AIPMT 2000
3 Qs

Included previous year papers

Newest papers appear first. Sort by year, question coverage or name.

PaperYear / sessionQuestions in this viewOpen
NEET 202620263View paper
NEET 202520252View paper
NEET 202420243View paper
NEET 2024 RE EXAMINATION20243View paper
NEET 202320233View paper
NEET 2023 MANIPUR20234View paper
NEET 2022 Phase 120224View paper
NEET 2022 PHASE 220223View paper
NEET 202120213View paper
NEET 2020 PHASE 120203View paper
AIIMS 201920193View paper
NEET 201920192View paper
AIIMS 201820182View paper
NEET 201820183View paper
AIIMS 201720173View paper
NEET 201720173View paper
NEET 2016 PHASE 120163View paper
NEET 2016 PHASE 220163View paper
AIPMT 201520152View paper
AIPMT 2015 Cancelled Paper20152View paper
AIPMT 201420142View paper
NEET 201320133View paper
NEET 2013 KARNATAKA20133View paper
AIPMT 2012 MAINS20122View paper
AIPMT 2012 PRELIMS20125View paper
AIPMT 2011 MAINS20113View paper
AIPMT 2011 PRELIMS20114View paper
AIPMT 2010 MAINS20102View paper
AIPMT 2010 PRELIMS20105View paper
AIPMT 200920094View paper
AIPMT 200820083View paper
AIPMT 200720074View paper
AIPMT 200620063View paper
AIPMT 200520056View paper
AIPMT 200420044View paper
AIPMT 200320034View paper
AIPMT 200220025View paper
AIPMT 200120013View paper
AIPMT 200020003View paper

All Semiconductor Electronics previous year questions

Practice every matching question in batches of 20, with every available option.

1
2000 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2000
The correct relation for \(\alpha\), \(\beta\) for a transistor
A
\(\beta = {{1 - \alpha } \over \alpha }\)
B
\(\beta = {\alpha \over {1 - \alpha }}\)
C
\(\alpha = {{\beta - 1} \over \beta }\)
D
\(\alpha \beta = 1\)
Open complete paper
2
2000 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2000
From the following diode circuit, which diode is in forward biased condition
A
AIPMT 2000 Physics - Semiconductor Electronics Question 41 English Option 1
B
AIPMT 2000 Physics - Semiconductor Electronics Question 41 English Option 2
C
AIPMT 2000 Physics - Semiconductor Electronics Question 41 English Option 3
D
AIPMT 2000 Physics - Semiconductor Electronics Question 41 English Option 4
Open complete paper
3
2000 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2000
The cations and anions are arranged in alternate form in
A
metallic crystal
B
ionic crystal
C
covalent crystal
D
semi-conductor crystal.
Open complete paper
4
2001 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2001
For a common base circuit if \({{{I_C}} \over {{I_E}}}\) = 0.98 then current gain for common emitter circuit will be
A
49
B
98
C
4.9
D
25.5.
Open complete paper
5
2001 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2001
The given truth table is for which logic gate

              \(\matrix{ A & B & Y \cr 1 & 1 & 0 \cr 0 & 1 & 1 \cr 1 & 0 & 1 \cr 0 & 0 & 1 \cr }\)
A
NAND
B
XOR
C
NOR
D
OR
Open complete paper
6
2001 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2001
The current in the circuit will be

AIPMT 2001 Physics - Semiconductor Electronics Question 44 English
A
5/40 A
B
5/50 A
C
5/10 A
D
5/20 A
Open complete paper
7
2002 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2002
For a transistor \({{{I_C}} \over {{I_E}}}\) = 0.96, then current gain for common emitter is
A
12
B
6
C
48
D
24
Open complete paper
8
2002 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2002
In a p-n junction
A
high potential at n side and low potential at p side
B
high potential at P side and low potential at n side
C
p and n both are at same potential
D
undetermined.
Open complete paper
9
2002 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2002
The given truth table is for which logic gate

              \(\matrix{ A & B & Y \cr 1 & 1 & 0 \cr 0 & 1 & 1 \cr 1 & 0 & 1 \cr 0 & 0 & 1 \cr }\)
A
NAND
B
XOR
C
NOR
D
OR.
Open complete paper
10
2002 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2002
For the given circuit of p-n junction diode which is correct

AIPMT 2002 Physics - Semiconductor Electronics Question 45 English
A
in forward bias the voltage across R is V
B
in reverse bias the voltage across R is V
C
in forward bias the voltage across R is 2V
D
in reverse bias the voltage across R is 2V.
Open complete paper
11
2002 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2002
Number of atom per unit cell in B.C.C.
A
9
B
4
C
2
D
1
Open complete paper
12
2003 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2003
A n-p-n transistor conducts when
A
both collector and emitter are positive with respect to the base
B
collector is positive and emitter is negative with respect to the base
C
collector is positive and emitter is at same potential as the base
D
both collector and emitter are negative with respect to the base
Open complete paper
13
2003 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2003
If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be
A
25 Hz
B
50 Hz
C
70.7 Hz
D
100 Hz
Open complete paper
14
2003 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2003
Reverse bias applied to a junction diode
A
lowers the potential barrier
B
raises the potential barrier
C
increases the majority carrier current
D
increases the minority carrier current
Open complete paper
15
2003 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2003
Barrier potential of a p-n junction diode does not depened on
A
diode design
B
temperature
C
forward bias
D
doping density
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16
2004 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2004
The output of OR gate is 1
A
if both inputs are zero
B
if either or both inputs are 1
C
only if both inputs are 1
D
if either inputs is zero
Open complete paper
17
2004 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2004
In semiconductors at a room temperature
A
the valence band is partially empty and the conduction band is partially filled
B
the valence band is completely filled and the conduction band is partially filled
C
the valence band is completely filled
D
the conduction band is completely empty
Open complete paper
18
2004 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2004
Of the diodes shown in the following diagrams, which one is reverse biased ?
A
AIPMT 2004 Physics - Semiconductor Electronics Question 55 English Option 1
B
AIPMT 2004 Physics - Semiconductor Electronics Question 55 English Option 2
C
AIPMT 2004 Physics - Semiconductor Electronics Question 55 English Option 3
D
AIPMT 2004 Physics - Semiconductor Electronics Question 55 English Option 4
Open complete paper
19
2004 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2004
The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output voltage is
A
(10/\(\sqrt 2\)) V
B
\(\left( {{{10} \over \pi }} \right)V\)
C
10 V
D
(20/\(\pi\)) V
Open complete paper
20
2005 · Physics · Modern Physics · Semiconductor Electronics
AIPMT 2005
In a p-n junction photo cell, the value of the photo-electromotive force profuced by monochromatic light is proportional to
A
The barrier voltage at the p-n junction.
B
The intensity of the light falling on the cell.
C
The frequency of the light falling on the cell.
D
The voltage applied at the p-n junction.
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Showing 20 of 125 questions