Logic - General Aptitude - General Aptitude (GA) Previous Year Questions

A

both the P-region and the N-region are heavily doped

B

the N-region is heavily doped compared to the P-region

C

the P-region is heavily doped compared to the N-region

D

an intrinsic silicon region is inserted between the P-region and the N-region

A

reduce the overall gain

B

reduce bandwidth

C

improve disturbance rejection

D

reduce sensitivity to parameter variation

A

G1(s)G2(s)

B

\(\frac{G1(s)}{G2(s)}\)

C

G1(s)\left(\frac{1}{G1(s)} + G2(s)\right)

D

G1(s)\left(\frac{1}{G1(s)} - G2(s)\right)

A

Current gain will increase.

B

Unity gain frequency will increase.

C

Emitter-base junction capacitance will increase.

D

Early Voltage will increase.

A

P

B

Q

C

R

D

S