Exam Details
ISROElectronics & Communication Engineering 2015
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Questions
80
Duration
180 mins
Package
ESE & GATE EC - Previous Year Papers
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Subtopic distribution
Difficulty distribution
80questions
Medium
63
78.8%
Hard
13
16.3%
Easy
4
5%
Question type distribution
80questions
Multiple Choices
80
100%
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Syllabus
Sample
Sample questions from this paper
Questions are selected across the paper subjects wherever the paper contains that variety.
2015 · Unclassified
ISROElectronics & Communication Engineering 2015
Electron mobility of the following intrinsic elements in descending order is :
2015 · Unclassified
ISROElectronics & Communication Engineering 2015
A sample of Si is doped with 1017 cm-3 donor atom. Considering electron mobility in the doped Si is 700 cm2 per V-sec. The approximate resistivity of the doped Si is:
A
1
B
10
C
0.089
D
100
2015 · Unclassified
ISROElectronics & Communication Engineering 2015
Common-base current gain of a p-n-p bipolar transistor is 0.99. The common emitter current gain of the transistor is :
2015 · Unclassified
ISROElectronics & Communication Engineering 2015
The electrical conductivity of a semiconductor increases when a radiation of a wavelength shorter than 1000 nm is incident on it. The band gap of the semiconductor is :
2015 · Unclassified
ISROElectronics & Communication Engineering 2015
The voltage across the resistor R is :
A
B
C
D
2015 · Unclassified
ISROElectronics & Communication Engineering 2015
The effective resistance faced by the voltage source is :
A
4
B
12
C
3
D
16
