ESEElectronics & Communication Engineering PAPER 2 (TECHNICAL) 2018

Consider the following statements regarding the formation of P-N junctions:
1) Holes diffuse across the junction from P-side to N-side.
2) The depletion layer is wiped out.
3) There is continuous flow of current across the junction.
4) A barrier potential is set up across the junction. Which of the above statements are correct?

Silicon devices can be employed for a higher temperature limit (190 ºC to 200 ºC) as compared to germanium devices (85 ºC to 100 ºC). With respect to this, which of the following is/are not correct?
1) Higher resistivity of silicon at higher temperature 2) Higher gap energy of Germanium compare to silicon
3) Lower intrinsic concentration of silicon with higher temperature
4) Use of silicon devices in high-power applications
Select the correct answer using the code given below:

For an n-channel silicon JFET with a = 2 × 10–4 cm and channel resistivity r = 5Ω-cm, μn= 1300 cm2/V-s and ε0= 9 × 10–12 F/m, the pinch-off voltage, Vp, is nearly

In tunnel diode, the Fermi level lies

The hFE values in the specification sheet of a transistor are hFE(max) = 225 and hFE(min) = 64 . What value of hFE is to be adopted in practice?

A transistor is connected in CE configuration with VCC = 10V. The voltage drop across the 600Ω resistor in the collector circuit is 0.6 V. If α = 0.98, the base current is nearly.