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Exam Details

2017 Electronics & Telecommunication Engineering

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Questions 150
Duration 180 mins
Package Indian Economic Service and Indian Statistical Service Examination - Previous Year Papers

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Showing all 150 questions in this paper.

Subject distribution

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Topic distribution

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Subtopic distribution

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Difficulty distribution

Medium 50 33.3%
Hard 50 33.3%
Easy 50 33.3%

Question type distribution

Multiple Choices 150 100%

Syllabus

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Sample questions from this paper

Questions are selected across the paper subjects wherever the paper contains that variety.

1
2017 · Unclassified
2017 Electronics & Telecommunication Engineering
Consider the following statements : The output of a linear circuit, driven with a sine wave at a frequency f, is itself a sine wave 1. at the same frequency 2. with chance of changed amplitude 3. with chances of changed amplitude and phase Which of the above statements is/are correct?
A
1 and 2
B
1 only
C
1 and 3
D
2 only
2
2017 · Unclassified
2017 Electronics & Telecommunication Engineering
Consider the following statements : The main contribution to photo-conduction is by 1. the generation of electron and hole pair by a photon 2. a donor electron jumping into the conduction band because of a photon's energy 3. a valence electron jumping into an acceptor state because of a photon's energy Which of the above statements is/are correct?
A
1 only
B
2 only
C
3 only
D
1, 2 and 3
3
2017 · Unclassified
2017 Electronics & Telecommunication Engineering
Thermal runaway is not possible in FET because as the temperature of the FET increases
A
mobility decreases
B
trans-conductance increases
C
drain current increases
D
trans-conductance decreases
4
2017 · Unclassified
2017 Electronics & Telecommunication Engineering
For JFET, the drain current I_D is
A
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)^{1/2}
B
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)
C
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)^{3/2}
D
I_DSS \left(1-\frac{V_{GS}}{Vₚ}\right)²
5
2017 · Unclassified
2017 Electronics & Telecommunication Engineering
For n-channel depletion MOSFET, the highest trans-conductance gain for small signal is at
A
V_{GS} = 0 V
B
V_{GS} = Vₚ
C
V_{GS} = |Vₚ|
D
V_{GS} = -Vₚ
6
2017 · Unclassified
2017 Electronics & Telecommunication Engineering
The n-p-n transistor made of silicon has a DC base bias voltage 15 V and an input base resistor 150 kA. Then the value of the base current into the transistor is
A
0353 A
B
9353 A
C
953 A
D
953 A